TY  - CHAP
AU  - Castaldini, A.
AU  - Cavallini, A.
AU  - Fraboni, B
AU  - Piqueras de Noriega, Javier
AU  - Méndez Martín, Bianchi
PY  - 1994
SN  - 0-7503-0294-1
UR  - https://hdl.handle.net/20.500.14352/60828
AB  - Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the...
M2  - 207
PB  - IOP Publishing LTD
KW  - Cathodoluminescence
TI  - Influence of defects on diffusion length inhomogeneity in gaas-te wafers
TY  - book part
ER  -