RT Journal Article
T1 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 San Andrés Serrano, Enrique
AB Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 or Ti(OC2H5)(4), and annealed at 750 degrees C in O-2, has been studied on silicon substrates. Our attention has been focused on the interfacial state and disordered-induced gap state densities. From our results, HPRS films annealed at 900 degrees C in oxygen atmosphere exhibit the best characteristics, with D-it density being the lowest value measured in this work (5-6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits. This result can be due to two contributions: the increase of the SiO2 film thickness and the crystallinity, since in the films annealed at 900 degrees C rutile is the dominant crystalline phase, as revealed by transmission electron microscopy and infrared spectroscopy. In the case of annealing in the range of 600-800 degrees C, anatase and rutile phases coexist. Disorder-induced gap state (DIGS) density is greater for 700 degrees C annealed HPRS films than for 750 degrees C annealed ALD TiO2 films, whereas 800 degrees C annealing offers DIGS density values similar to ALD cases. For ALD films, the studies clearly reveal the dependence of trap densities on the chemical route used.
PB Iop Publishing Ltd
SN 0268-1242
YR 2005
FD 2005-10
LK https://hdl.handle.net/20.500.14352/51115
UL https://hdl.handle.net/20.500.14352/51115
LA eng
NO © 2005 IOP Publishing Ltd. The study was partially supported by the Spanish DGE-SIC under grant no. BFM 2001-2250 and TEC 2004-01237/MIC, and by the Estonian Science Foundation (grant no. 5861).
NO Spanish DGE-SIC
NO Estonian Science Foundation
DS Docta Complutense
RD 17 abr 2025