TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - San Andrés Serrano, Enrique
PY  - 2005
DO  - 10.1088/0268-1242/20/10/011
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/51115
T2  - Semiconductor Science and Technology
AB  - Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 or...
LA  - eng
M2  - 1044
PB  - Iop Publishing Ltd
KW  - V Characteristics
KW  - Thin-Films
KW  - Interface.
TI  - A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
TY  - journal article
VL  - 20
ER  -