RT Journal Article
T1 Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN
A1 Khaderbad, M. A.
A1 Dhar, S.
A1 Pérez García, Lucas
A1 Ploog, K. H.
A1 Melnikov, A.
A1 Wieck, A. D.
AB The authors have studied the effect of annealing on the magnetic  and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300 keV Gd^(3+) ions at room temperature at doses 2.4x10^(11) and 1.0x10^(15) cm^(-2), are rapid thermally annealed in flowing N₂ gas up to 900 ⁰C for 30 s. X-ray diffraction results indicate the presence of Ga and N interstitials in the implanted layers. Their densities are also found to reduce upon annealing. At the same time, magnetic measurements on these samples clearly show a reduction in the saturation magnetization as a result of the annealing for the lowest Gd incorporated sample, while in the highest Gd incorporated sample it does not change. These findings suggest that Gd might be inducing magnetic moment in Ga and/or N interstitials in giving rise to an effective colossal magnetic moment of Gd and the associated ferromagnetism observed in Gd:GaN.
PB American Institute of Physics
SN 0003-6951
YR 2007
FD 2007-08-13
LK https://hdl.handle.net/20.500.14352/52135
UL https://hdl.handle.net/20.500.14352/52135
LA eng
NO ©2007 American Institute of Physics.One of the authors (L.P.) thanks the Alexander von Humboldt Foundation, Germany, for financial support.
NO Alexander von Humboldt Foundation
DS Docta Complutense
RD 12 abr 2025