%0 Journal Article
%A Villafranca Velasco, Aitor
%A Calvo Padilla, María Luisa
%A Cheben, Pavel
%A Ortega Moñux, Alejandro
%A Alonso Ramos, Carlos Alberto
%A Molina fernández, Íñigo
%A Lapointe, Jean
%A Vachon, Martin
%A Janz, Siegfried
%A Xu, Dan-Xia
%T Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide
%D 2012
%@ 0146-9592
%U https://hdl.handle.net/20.500.14352/44172
%X The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 mu m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.
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