RT Journal Article
T1 Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide
A1 Villafranca Velasco, Aitor
A1 Calvo Padilla, María Luisa
A1 Cheben, Pavel
A1 Ortega Moñux, Alejandro
A1 Alonso Ramos, Carlos Alberto
A1 Molina fernández, Íñigo
A1 Lapointe, Jean
A1 Vachon, Martin
A1 Janz, Siegfried
A1 Xu, Dan-Xia
AB The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 mu m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.
PB The Optical Society Of America
SN 0146-9592
YR 2012
FD 2012-02-01
LK https://hdl.handle.net/20.500.14352/44172
UL https://hdl.handle.net/20.500.14352/44172
LA eng
NO © 2012 Optical Society of America.Financial support from the Spanish Ministry of Science and Innovation (MICINN) is acknowledged under grants TEC2008-04105 and TEC2009-10152.
NO Ministerio de Ciencia e Innovación (MICINN), España
DS Docta Complutense
RD 15 abr 2025