%0 Journal Article
%A Panin, G. N.
%A Piqueras De Noriega, Francisco Javier
%A Sochinskii, N.
%A Dieguez, E.
%T Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates
%D 1997
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/59161
%X The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth.
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