RT Journal Article
T1 Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates
A1 Panin, G. N.
A1 Piqueras De Noriega, Francisco Javier
A1 Sochinskii, N.
A1 Dieguez, E.
AB The aα-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the α-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during α-Hgl_2 epitaxial growth.
PB Amer Inst Physics
SN 0003-6951
YR 1997
FD 1997-02-17
LK https://hdl.handle.net/20.500.14352/59161
UL https://hdl.handle.net/20.500.14352/59161
LA eng
NO © 1997 American Institute of Physics.G. P. and N. S. thank Spanish MEC for research grants. This work was supported by the DGICYT (Project No. PB 93-1256) and CICYT (Project No. ESP95-0148).
NO MEC
NO DGICYT
NO CICYT
DS Docta Complutense
RD 8 abr 2025