RT Journal Article
T1 Optimization of scandium oxide growth by high pressure sputtering on silicon
A1 Feijoo, Pedro Carlos
A1 Pampillón, María Ángela
A1 San Andrés Serrano, Enrique
A1 Lucía Mulas, María Luisa
AB This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScOx/Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron microscopy. Aluminum gate electrodes were evaporated for metal–insulator–semiconductor (MIS) fabrication. From the electrical characterization of the MIS devices, the density of interfacial defects is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. This is also supported by lower flatband voltage shifts in the capacitance versus voltage hysteresis curves. Sputtering at high pressures (above 100 Pa) reduces the interfacial SiOx formation, according to the infrared spectra. The growth rates decrease with deposition pressure, so a very accurate control of the layer thicknesses could be provided.
PB Elsevier
SN 0040-6090
YR 2012
FD 2012-12-01
LK https://hdl.handle.net/20.500.14352/98235
UL https://hdl.handle.net/20.500.14352/98235
LA eng
NO P.C. Feijoo, M.A. Pampillón, E. San Andrés, M.L. Lucía, Optimization of scandium oxide growth by high pressure sputtering on silicon, Thin Solid Films, Volume 526, 2012, Pages 81-86, ISSN 0040-6090, https://doi.org/10.1016/j.tsf.2012.11.008.
NO Ministerio de Ciencia e Innovación (España)
NO Universidad Complutense de Madrid
DS Docta Complutense
RD 7 abr 2025