TY  - CHAP
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
AU  - San Andrés Serrano, Enrique
PY  - 2009
DO  - 10.1109/SCED.2009.4800424
SN  - 978-1-4244-2838-0
UR  - https://hdl.handle.net/20.500.14352/53365
AB  - In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed....
LA  - eng
M2  - 38
PB  - IEEE
KW  - Solar-Cells
KW  - Efficiency.
TI  - High Quality Ti-Implanted Si Layers Above Solid Solubility Limit
TY  - book part
ER  -