%0 Journal Article
%A Carpio Rodríguez, Ana María
%A Bonilla, Luis L.
%A Wacker, A.
%A Schöll, E.
%T Wave fronts may move upstream in semiconductor superlattices
%D 2000
%@ 1539-3755
%U https://hdl.handle.net/20.500.14352/57219
%X In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.
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