RT Journal Article
T1 Wave fronts may move upstream in semiconductor superlattices
A1 Carpio Rodríguez, Ana María
A1 Bonilla, Luis L.
A1 Wacker, A.
A1 Schöll, E.
AB In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.
PB American Physical Society
SN 1539-3755
YR 2000
FD 2000
LK https://hdl.handle.net/20.500.14352/57219
UL https://hdl.handle.net/20.500.14352/57219
LA eng
NO Carpio Rodríguez, A. M., Bonilla, L. L., Wacker, A. y Schöll, E. «Wave Fronts May Move Upstream in Semiconductor Superlattices». Physical Review E, vol. 61, n.o 5, mayo de 2000, pp. 4866-76. DOI.org (Crossref), https://doi.org/10.1103/PhysRevE.61.4866.
NO Directorate General for Higher Education (Portugal)
NO Total material requirement of the European Union
DS Docta Complutense
RD 10 abr 2025