RT Journal Article
T1 Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
A1 Avila, J.
A1 Mascaraque Susunaga, Arantzazu
A1 Michel, E. G.
A1 Asensio, M. C.
A1 LeLay, G.
A1 Ortega Villafuerte, Yanicet
A1 Perez, R.
A1 Flores, F.
AB The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in the surface state crossing the Fermi energy. Theoretical calculations show that these two effects are due to the existence of two structurally different kinds of Sn atoms that fluctuate at room temperature between two positions and are stabilized in a 3 x 3 structure at low temperature.
PB American Physical Society
SN 0031-9007
YR 1999
FD 1999-01-11
LK https://hdl.handle.net/20.500.14352/59420
UL https://hdl.handle.net/20.500.14352/59420
LA eng
NO © 1999 The American Physical Society.This work was financed by DGICYT (Spain) (Grants No. PB-97-0031, No. PB-97-1199, and No. PB92–0168C). We thank the European Union (A. M. and E. G. M.) and Eusko Jaurlaritza (A. M.) for financial support.
NO DGICYT (Spain)
NO European Union
NO Eusko Jaurlaritza
DS Docta Complutense
RD 4 abr 2025