RT Journal Article
T1 Effect of erbium on the luminescence properties of GaSb crystals
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Plaza, J. L.
A1 Diéguez, E.
AB The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independent rare-earth luminescence and the possibility of activation of the emitting rare-earth centers by minority carrier injection. In this work the effect of erbium doping on the luminescence and on the native accepters of GaSb crystals has been investigated by CL-SEM. Er doping has been found to increase the total CL intensity and to produce spectral changes that depend on the erbium concentration. At moderate doping the native acceptor concentration, as detected by the luminescence band A, decreases. At high Er concentrations Er-Sb precipitates form and doping appears not to be efficient in the suppression of accepters. X-ray microanalysis reveals that the composition of the precipitates is Er-5 Sb-3. Emission from intraionic transitions of Er is observed in highly doped crystals.
PB Trans tech-Scitec Publications LTD
SN 1012-0394
YR 1998
FD 1998
LK https://hdl.handle.net/20.500.14352/58958
UL https://hdl.handle.net/20.500.14352/58958
DS Docta Complutense
RD 15 may 2024