%0 Journal Article
%A Rams, J.
%A Méndez Martín, María Bianchi
%A Craciun, G.
%A Plugaru, R.
%A Piqueras De Noriega, Francisco Javier
%T Cathodoluminescence enhancement in porous silicon cracked in vacuum
%D 1999
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/58944
%X An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.
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