RT Book, Section
T1 Raman scattering characterization of implanted ZnO
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
AB In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid thermal annealing (RTA). Characteristic disorder-activated modes are observed in the spectra that can be used to assess the degree of lattice damage. ZnO samples were also implanted with native Zn+ and O+ ions under similar conditions to study specific effects of implantation with N+ and P+. As revealed by the intensity of disorder-activated bands, the implantation induced lattice damage is considerably higher for Zn+ than for the lighter O+ ion. In samples implanted with N+ additional Raman peaks emerge that are not observed either in the samples implanted with the native Zn+ and O+ ions or in the samples implanted with P+, thus pointing to a local vibrational mode of N or a N complex as the origin of these modes. Disorder-activated features are fully removed by RTA, indicating a high degree of lattice recovery by RTA even for the heavily damaged ZnO samples implanted with Zn+.
PB Materials Research Society
SN 978-1-55899-914-5
YR 2007
FD 2007
LK https://hdl.handle.net/20.500.14352/53368
UL https://hdl.handle.net/20.500.14352/53368
NO Symposium on Zinc Oxide and Related Materials (2006. Boston, USA).
DS Docta Complutense
RD 14 dic 2025