TY  - JOUR
AU  - González Díaz, Germán
AU  - Artús, L.
AU  - Calleja, E.
AU  - Cuscó, R.
AU  - Iborra, E.
AU  - Jiménez, J.
AU  - Pastor, D.
AU  - Peiró, F.
PY  - 2006
DO  - 10.1063/1.2259817
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51253
T2  - Journal of Applied Physics
AB  - We have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology...
LA  - eng
PB  - American Institute of Physics
KW  - Molecular-Beam Epitaxy
KW  - Light-Emitting-Diodes
KW  - Raman-Scattering
KW  - Silicon-Nitride
KW  - Gallium Nitride
KW  - Implanted GaN
KW  - Si (111)
KW  - Nanocrystals
KW  - Modes.
TI  - The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
TY  - journal article
VL  - 100
ER  -