RT Book, Section
T1 Cathodoluminescence characterization of InGaSb crystals
A1 Chioncel, M.F.
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras De Noriega, Francisco Javier
A1 Vincent López, José Luis
A1 Bermudez, V.
A1 Dieguez, E.
AB The nature and the spatial distribution of radiative defects in In(X)Ga(1-x)Sb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the fori-nation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the V(Ga)-Ga(Sb) acceptor in GaSb.
PB IEEE
SN 0-7803-8166-1
YR 2004
FD 2004
LK https://hdl.handle.net/20.500.14352/53374
UL https://hdl.handle.net/20.500.14352/53374
LA eng
NO ©(2004) IEEE.International Conference on Microelectronics (MIEL 2004).(24. 2004. Nis, Serbia).This work has been carried out in the frame of the  Fifth Framework European Programme for research,  HPRN-CT 2001-00199 project. M.F.C. acknowledges European Commission for financial support. Support from  MCYT through project  MAT2000-2119 is also
NO Fifth Framework European Programme for research
NO European Commission
NO MCYT
DS Docta Complutense
RD 18 abr 2025