RT Journal Article
T1 Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
A1 Cremades Rodríguez, Ana Isabel
A1 Narayanan, V.C.
A1 Piqueras De Noriega, Francisco Javier
A1 Lima, A.P.
A1 Ambacher, O.
A1 Stutzmann, M.
AB Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below.
PB American Institute of Physics
SN 0021-8979
YR 2001
FD 2001-11-01
LK https://hdl.handle.net/20.500.14352/58811
UL https://hdl.handle.net/20.500.14352/58811
LA eng
NO © 2001 American Institute of Physics.This work was partially supported by the Ministerio de Ciencia y Tecnologıía (Project No. Mat-2000-2119). The help of F. Sanz is acknowledged.
NO Ministerio de Ciencia y Tecnología
DS Docta Complutense
RD 9 abr 2025