TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 1999
DO  - 10.1116/1.582107
SN  - 0734-2101
UR  - https://hdl.handle.net/20.500.14352/59270
T2  - Journal of vacuum science & technology a: Vacuum surfaces and films
AB  - The influence of rapid thermal annealing treatments on the interface characteristics of Al/SiNx:H/InP devices was analyzed. The insulator was obtained by jan electron cyclotron resonance plasma method at a 200 degrees C-deposition temperature. The...
M2  - 2178
PB  - AVS Amer. Inst. Physics
KW  - Chemical-Vapor-Deposition
KW  - Electron-Chemical-Vapor-Deposition
KW  - Electron-Cyclotron-Resonance
KW  - Insulator-Semiconductor Devices
KW  - Level Transient Spectroscopy
KW  - Plasma Method
KW  - Temperature
KW  - Dielectrics
KW  - Films
KW  - InP.
TI  - Thermally induced improvements on SiNx: H/InP devices
TY  - journal article
VL  - 17
ER  -