TY  - JOUR
AU  - Caudevilla Gutiérrez, Daniel
AU  - Algaidy, Sari
AU  - Pérez Zenteno, Francisco José
AU  - Duarte Cano, Sebastián
AU  - García Hernansanz, Rodrigo
AU  - Olea Ariza, Javier
AU  - San Andrés Serrano, Enrique
AU  - Prado Millán, Álvaro Del
AU  - Barrio, R.
AU  - Torres, I.
AU  - García Hemme, Eric
AU  - Pastor, D.
PY  - 2022
DO  - 10.1088/1361-6641/ac9a67
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/72845
T2  - Semiconductor Science and Technology
AB  - In this work we have successfully hyperdoped germanium with tellurium with a concentration peak of 10(21) cm(-3). The resulting hyperdoped layers show good crystallinity and sub-bandgap absorption at room temperature which makes the material a good...
LA  - eng
PB  - Iop Publishing Ltd
KW  - Implantation
KW  - Silicon
TI  - Electrical transport properties in Ge hyperdoped with Te
TY  - journal article
VL  - 37
ER  -