RT Journal Article
T1 Flat bands and gaps in twisted double bilayer graphene
A1 Culchac, F. J.
A1 Del Grande, R. R.
A1 Capaz, Rodrigo B.
A1 Chico Gómez, Leonor María
A1 Morell, E. Suárez
AB We present electronic structure calculations of twisted double bilayer graphene (TDBG): a tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at inner layers, giving rise to the peculiar angle dependence of the band gap, which reduces at low angles. For these low twist angles, the TDBG develops flat bands, in which electrons in the inner layers are localized at the AA regions, as in twisted bilayer graphene.
PB Royal Society of Chemistry
SN 2040-3364
YR 2020
FD 2020
LK https://hdl.handle.net/20.500.14352/130847
UL https://hdl.handle.net/20.500.14352/130847
LA eng
NO F. J. Culchac, R. R. Del Grande, R. B. Capaz, L. Chico and E. S. Morell, Nanoscale, 2020, 12, 5014–5020.
NO Fondo Nacional de Desarrollo Científico y Tecnológico (Chile)
NO European Commission
NO Ministerio de Economía y Competitividad (España)
NO Agencia Estatal de Investigación (España)
NO Ministerio de Ciencia e Innovación (España)
NO Coordenação de Aperfeiçoamento de Pessoal de Nivel Superior (Brasil)
NO Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro
NO Instituto Nacional de Ciência e Tecnologia em Nanomateriais de Carbono (Brasil)
DS Docta Complutense
RD 25 feb 2026