TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2000
DO  - 10.1016/S0026-2714(99)00325-X
SN  - 0026-2714
UR  - https://hdl.handle.net/20.500.14352/59244
T2  - Microelectronics reliability
AB  - In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient...
LA  - eng
M2  - 845
PB  - Pergamon-Elsevier Science Ltd.
KW  - Electrical-Properties
KW  - Devices
KW  - Films.
TI  - Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniques
TY  - journal article
VL  - 40
ER  -