RT Journal Article
T1 Silicon‐based intermediate‐band infrared photodetector realized by Te Hyperdoping
A1 Wang, Mao
A1 García Hemme, Eric
A1 Berencén, Yonder
A1 Hübner, René
A1 Xie, Yufang
A1 Rebohle, Lars
A1 Xu, Chi
A1 Schneider, Harald
A1 Helm, Manfred
A1 Zhou, Shengqiang
AB Si-based photodetectors satisfy the criteria of being low-cost and environmentally friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 mu m and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 mu m. The correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10(12) cmHz(1/2) W-1 and 9.2 x 10(8) cmHz(1/2) W-1 at 1 mu m and 1.55 mu m, respectively, is also investigated. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature.
PB Wiley
SN 2195-1071
YR 2020
FD 2020
LK https://hdl.handle.net/20.500.14352/101023
UL https://hdl.handle.net/20.500.14352/101023
LA eng
NO Wang, Mao, et al. «Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping». Advanced Optical Materials, vol. 9, n.o 4, febrero de 2021, p. 2001546. https://doi.org/10.1002/adom.202001546.
NO Free full text from Published  (Versión Publicada Open Acces en https://onlinelibrary.wiley.com/doi/10.1002/adom.202001546)
NO Comunidad de Madrid
NO Ministerio de Economía y Competitividad (España)
NO Deutsche Forschungsgemeinschaft
NO China Scholarship Council
NO European Commission
DS Docta Complutense
RD 31 dic 2025