RT Journal Article
T1 Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions
A1 Sánchez Santolino, Gabriel
A1 Tornos Castillo, Javier
A1 Hernández Martín, David
A1 Beltrán Fínez, Juan Ignacio
A1 Munuera, Carmen
A1 Cabero Piris, Mariona
A1 Pérez Muñoz, Ana
A1 Ricote, Jesús
A1 Mompean, Federico
A1 García Hernández, Mar
A1 Sefrioui Khamali, Zouhair
A1 León Yebra, Carlos
A1 Pennycook, Steve, J.
A1 Muñoz, María Carmen
A1 Varela Del Arco, María
A1 Santamaría Sánchez-Barriga, Jacobo
AB The peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic La0.7Sr0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier, where a head-to-head domain wall is constrained. An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying discrete quantum-well energy levels. These states assist resonant electron tunnelling processes across the barrier, leading to strong quantum oscillations of the electrical conductance.
PB Nature Research
SN 1748-3387
YR 2017
FD 2017-04-10
LK https://hdl.handle.net/20.500.14352/93034
UL https://hdl.handle.net/20.500.14352/93034
LA eng
NO Sanchez-Santolino, G., Tornos, J., Hernandez-Martin, D. et al. Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions. Nature Nanotech 12, 655–662 (2017). https://doi.org/10.1038/nnano.2017.51
NO Está depositada una versión preprint del artículo
NO Ministerio de Economía, Comercio y Empresa (España)
NO Comunidad de Madrid
NO United States Department of Energy
NO BBVA Foundation
NO European Commission
NO Red Española de Superconputación
NO Universite Paris Saclay
NO Centre National de la Recherche Scientifique (Francia)
NO CeSViMa (Madrid)
DS Docta Complutense
RD 10 abr 2025