RT Journal Article
T1 Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dutta, P.S.
A1 Diéguez, E.
AB The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.
PB Pergamon-Elsevier Science LTD
SN 0038-1098
YR 1998
FD 1998
LK https://hdl.handle.net/20.500.14352/58956
UL https://hdl.handle.net/20.500.14352/58956
LA eng
NO © 1998 Elsevier Science Ltd. All rights reserved.Acknowledgements—GrowtThis work was supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).
NO DGES
NO CICYT
DS Docta Complutense
RD 6 abr 2025