RT Book, Section
T1 Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation
A1 Castán, Helena
A1 Pérez, Eduardo
A1 Dueñas, Salvador
A1 Bailón, Luis
A1 Olea Ariza, Javier
A1 Pastor Pastor, David
A1 García Hemme, Eric
A1 Irigoyen Irigoyen, Maite
A1 González Díaz, Germán
A2 Pelaz, Lourdes
A2 Santos, Iván
A2 Duffy, Ray
A2 Torregrosa, Frank
A2 Bourdelle, Konstantin
AB Intermediate band silicon solar cells have been fabricated by Titanium ion implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the unimplanted substrate is obtained. In this work we present electrical characterization results which evidence the formation of the intermediate band on silicon when ion implantation dose is beyond the Mott limit. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the non-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increase is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Titanium deep levels have been measured by Admittance Spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV bellow the conduction band for implantation doses in the range 10^13-10^14 at/cm^2. For doses over the Mott limit the implanted atoms become non recombinant. Admittance measurements are the first experimental demonstration the Intermediate Band is formation. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n^+/n junction.
PB American Institute of Physics (AIP)
SN 978-0-7354-1109-8
YR 2012
FD 2012
LK https://hdl.handle.net/20.500.14352/45611
UL https://hdl.handle.net/20.500.14352/45611
LA eng
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NO © 2012 American Institute of Physics.International Conference on Ion Implantation Technology (19ª. 2012. Valladolid).This work was partially supported by VA128A11-2 funded by the Junta de Castilla y León, Spanish TEC2011 under grant 27292-C02-01, S/2009/ENE- 1477) funded by the Comunidad de Madrid and CSD2006-00004 funded by the Spanish Consolider National Program. Research of E. Perez was supported by a University of Valladolid FPI grant and research of E. Garcia-Hemme by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM).
NO Comunidad de Madrid
NO Junta de Castilla y León
NO Consolider-Ingenio
NO Ministerio de Economía y Competitividad (MINECO), España
NO Universidad de Valladolid
NO Campus de Excelencia Internacional (CEI) Moncloa
DS Docta Complutense
RD 4 may 2024