TY  - CHAP
AU  - Castán, Helena
AU  - Pérez, Eduardo
AU  - Dueñas, Salvador
AU  - Bailón, Luis
AU  - Olea Ariza, Javier
AU  - Pastor Pastor, David
AU  - García Hemme, Eric
AU  - Irigoyen Irigoyen, Maite
AU  - González Díaz, Germán
A4  - Pelaz, Lourdes
A4  - Santos, Iván
A4  - Duffy, Ray
A4  - Torregrosa, Frank
A4  - Bourdelle, Konstantin
PY  - 2012
DO  - 10.1063/1.4766521
SN  - 978-0-7354-1109-8
UR  - https://hdl.handle.net/20.500.14352/45611
AB  - Intermediate band silicon solar cells have been fabricated by Titanium ion implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the unimplanted substrate is obtained. In this work we present...
LA  - eng
M2  - 189
PB  - American Institute of Physics (AIP)
KW  - Solar cells
KW  - Intermediate band
KW  - Ion implantation
KW  - Admittance spectroscopy
KW  - Capacitance-voltage transient technique
TI  - Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation
TY  - book part
ER  -