TY  - JOUR
AU  - Castaldini, A.
AU  - Cavallini, A.
AU  - Polenta, L.
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2002
DO  - 10.1088/0953-8984/14/48/355
SN  - 0953-8984
UR  - https://hdl.handle.net/20.500.14352/59110
T2  - Journal of Physics-Condensed Matter
AB  - The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness strongly...
LA  - eng
M2  - 13095
PB  - IOP Publishing Ltd
KW  - Vapor-Phase Epitaxy
KW  - Persistent Photoconductivity
KW  - Yellow Luminescence
KW  - Deep Levels
KW  - Doped Gan
KW  - Films
KW  - Spectroscopy
KW  - Vacancies
TI  - Electrical and optical characterization of GaN HVPE layers related to extended defects
TY  - journal article
VL  - 14
ER  -