RT Journal Article
T1 Electron transport across a Gaussian superlattice
A1 Gomez, I.
A1 Domínguez-Adame Acosta, Francisco
A1 Díez, E.
A1 Bellani, V.
AB We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.
PB American Institute of Physics
SN 0021-8979
YR 1999
FD 1999-04-01
LK https://hdl.handle.net/20.500.14352/59361
UL https://hdl.handle.net/20.500.14352/59361
LA eng
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NO © 1999 American Institute of Physics.Work at Madrid has been supported by CAM (Spain) under Project No. 07N/0034/1998.
NO CAM
DS Docta Complutense
RD 30 abr 2024