%0 Journal Article
%A Hidalgo Alcalde, Pedro
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Dutta, P: S.
%A Dieguez, E.
%T Effect of In doping in GaSb crystals studied by cathodoluminescence
%D 1999
%@ 0268-1242
%U https://hdl.handle.net/20.500.14352/58940
%X The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.
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