RT Journal Article
T1 Effect of In doping in GaSb crystals studied by cathodoluminescence
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dutta, P: S.
A1 Dieguez, E.
AB The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.
PB IOP Publishing LTD
SN 0268-1242
YR 1999
FD 1999-10
LK https://hdl.handle.net/20.500.14352/58940
UL https://hdl.handle.net/20.500.14352/58940
LA eng
NO © 1999 IOP Publishing Ltd.This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340).
NO DGES
NO CICYT
DS Docta Complutense
RD 4 abr 2025