TY  - JOUR
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
AU  - Dutta, P: S.
AU  - Dieguez, E.
PY  - 1999
DO  - 10.1088/0268-1242/14/10/304
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/58940
T2  - Semiconductor Science and Technology
AB  - The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor...
LA  - eng
M2  - 901
PB  - IOP Publishing LTD
KW  - Gallium Antimonide
TI  - Effect of In doping in GaSb crystals studied by cathodoluminescence
TY  - journal article
VL  - 14
ER  -