TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - García, S.
AU  - Martín, J.M.
AU  - Fernández, M.
PY  - 1998
DO  - 10.1016/S0040-6090(97)00510-5
SN  - 0040-6090
UR  - https://hdl.handle.net/20.500.14352/59296
T2  - Thin Solid Films
AB  - The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are found for...
LA  - eng
M2  - 116
PB  - Elsevier Science SA
KW  - Chemical-Vapor-Deposition
KW  - Silicon-Nitride
KW  - Hydrogen Content
KW  - H Fiolms
KW  - Room-Temperature
KW  - Amorphous Sinx.
TI  - Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method
TY  - journal article
VL  - 317
ER  -