RT Journal Article
T1 High-quality fs-laser structured Si in air for optoelectronic applications
A1 Benítez Fernández, Rafael
A1 Gomez-Munoz, Gonzalo
A1 García Hemme, Eric
A1 Roca Giménez, Nuria
A1 Cabello, Fátima
A1 García Pardo, Marina
A1 Gonzalo, Jose
A1 Solis, Javier
A1 Prado Millán, Álvaro Del
A1 GarciaLechuga, Mario
A1 Olea Ariza, Javier
A1 Siegel, Jan
A1 Pastor Pastor, David
AB In this work, we describe a methodology to highly improve the quality of micro-structured silicon obtained by femtosecond-laser irradiation in ambient air atmosphere. Optimum femtosecond laser irradiation conditions have been selected to obtain a high aspect ratio spike morphology at the surface of silicon. Due to the aggressive fs-laser process, the crystalline structure of the material presents extended defects, which can be removed by rapid thermal annealing. Moreover, thermal annealing triggers diffusion of oxygen to the surface, which was incorporated from the air atmosphere into the bulk upon repetitive fs-laser irradiation. This oxygen binds with silicon atoms within the amorphous surface layer, giving rise to SiOx, obtaining irregular decorations at the surface of the spike structures. These decorations can be removed by a buffered hydrofluoric acid solution, which etches the silicon oxide but not the crystalline silicon. Using this strategy we have obtained a high crystalline quality with: high absorption of around 95 % in the wavelength region from 200 to 1100 nm, minimized defect-related absorption from 1100 to 2500 nm; a crystalline lattice free of defects and oxygen; and a high aspect-ratio micro-spike morphology formed by c-Si free of surface SiOx nano-decorations that can be useful to fabricate optoelectronic devices.
PB Elsevier
SN 0169-4332
YR 2026
FD 2026-06
LK https://hdl.handle.net/20.500.14352/134039
UL https://hdl.handle.net/20.500.14352/134039
LA eng
NO R. Benítez-Fernández, G. Gomez-Munoz, E. García-Hemme, N. Roca–Giménez, F. Cabello, M. García-Pardo, J. Gonzalo, J. Solis, Á.D. Prado, M. Garcia-Lechuga, J. Olea, J. Siegel, D. Pastor, High-quality fs-laser structured Si in air for optoelectronic applications, Applied Surface Science 730 (2026) 166323. https://doi.org/10.1016/j.apsusc.2026.166323.
NO © 2026 The Author(s)PIPF-2023/ECO-30541
NO European Commission
NO Ministerio de Ciencia e Innovación (España)
NO Agencia Estatal de Investigación (España)
NO Comunidad de Madrid
DS Docta Complutense
RD 12 may 2026