%0 Journal Article
%A Wirths, S.
%A Pampillón Arce, María Ángela
%A San Andrés Serrano, Enrique
%A Starge, D.
%A Tiedemann, A.T.
%A Mussler, G.
%A Fox, A.
%A Breuer, U.
%A Hartmann, J-M.
%A Mantl, S.
%A Buca, D.
%T Growth and interface engineering of highly strained low bandgap group IV semiconductors
%D 2014
%U https://hdl.handle.net/20.500.14352/34882
%X Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
%~