RT Journal Article
T1 Growth and interface engineering of highly strained low bandgap group IV semiconductors
A1 Wirths, S.
A1 Pampillón Arce, María Ángela
A1 San Andrés Serrano, Enrique
A1 Starge, D.
A1 Tiedemann, A.T.
A1 Mussler, G.
A1 Fox, A.
A1 Breuer, U.
A1 Hartmann, J-M.
A1 Mantl, S.
A1 Buca, D.
AB Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
PB IEEE
YR 2014
FD 2014
LK https://hdl.handle.net/20.500.14352/34882
UL https://hdl.handle.net/20.500.14352/34882
LA eng
NO © 2014 IEEE. International Silicon-Germanium Technology and Device Meeting (ISTDM) (7. 2014. Singapore).
DS Docta Complutense
RD 24 abr 2025