TY  - JOUR
AU  - Wirths, S.
AU  - Pampillón Arce, María Ángela
AU  - San Andrés Serrano, Enrique
AU  - Starge, D.
AU  - Tiedemann, A.T.
AU  - Mussler, G.
AU  - Fox, A.
AU  - Breuer, U.
AU  - Hartmann, J-M.
AU  - Mantl, S.
AU  - Buca, D.
PY  - 2014
DO  - 10.1109/istdm.2014.6874645
UR  - https://hdl.handle.net/20.500.14352/34882
T2  - 2014 7th International Silicon-Germanium Technology and device meetinTING (ISTDM)
AB  - Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These...
LA  - eng
M2  - 13
PB  - IEEE
TI  - Growth and interface engineering of highly strained low bandgap group IV semiconductors
TY  - journal article
ER  -