TY  - JOUR
AU  - Castaldini, A.
AU  - Cavallini, A.
AU  - Fraboni, B.
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1994
DO  - 10.1016/0921-5107(94)90091-4
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/59265
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A>1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te...
M2  - 397
PB  - Elsevier Science SA
KW  - Defect
KW  - Bulk
TI  - Junction spectroscopy of highly doped GaAs: detection of the EL2 trap
TY  - journal article
VL  - 28
ER  -