%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A San Andrés Serrano, Enrique
%T On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
%D 2005
%@ 0026-2714
%U https://hdl.handle.net/20.500.14352/51116
%X We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.
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