RT Journal Article
T1 On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
A1 San Andrés Serrano, Enrique
AB We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.
PB Pergamon-Elsevier Science Ltd.
SN 0026-2714
YR 2005
FD 2005-05
LK https://hdl.handle.net/20.500.14352/51116
UL https://hdl.handle.net/20.500.14352/51116
LA eng
NO [1] Green, M.L., Gusev, E.P., Degraeve, R., Garfunkel, E.L., J. Appl. Phys., 2001,90, 2057.[2] Basa, D.K., Bose, M., Bose, D.N., J. Appl. Phys., 2000, 87, 4324.[3] Del Prado, Á., Martínez, F., Mártil, I., González-Díaz, G., Fernández, M., J. Vac. Sci. Technol. A, 1999, 17, 1263.[4] Kern, W., RCA Rev., 1970, 31, 187.[5] He, L., Hasegawa, H., Sawada, T., Ohno, H., J. Appl. Phys., 1988, 63, 2120.[6] Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., et al., Appl. Phys. Lett., 1997, 71, 826.[7] Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Blanco, N., Mártil, I., et al., Microelectron. Reliab., 2000, 40, 845.
NO Workshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd.  All rights reserved.
DS Docta Complutense
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