RT Journal Article
T1 Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC
A1 Ottaviani, L.
A1 Idrissi, H.
A1 Hidalgo Alcalde, Pedro
A1 Lancin, M.
AB This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-oriented 4H-SiC substrates, aiming at determining properties of some extended defects. As-grown basal plane dislocations with the Burgers vector b = 1/3 < 11-20 > previously revealed to be associated to a radiative recombination level at 1.80 eV. Well controlled dislocations were here introduced by annealing the sample under compressive stress at 973 K. After the annealing, double stacking faults were detected, formed by two Shockley partial dislocations gliding in two successive basal planes. These defects proved to introduce a rectifying behaviour during forward voltage operation, with a corresponding barrier height value of 0.58 eV at room temperature. Cathodoluminescence measurements allowed to attribute a radiative level at 1.80 eV to the extended defects, giving rise to a double luminescence peak.
PB Wiley-V C H Verlag GmbH
SN 1610-1634
YR 2005
FD 2005
LK https://hdl.handle.net/20.500.14352/51053
UL https://hdl.handle.net/20.500.14352/51053
LA eng
NO [1] H. Yano, T. Hirao ; T. Kimoto, H. Matsunami, IEEE Electron Dev. Lett. 20, 611 (1999).[2] J. Wong-Leung, M. Linnarsson, B. Svensson, Physica B 340, 132 (2003).[3] J. Liu, M. Skowronski, C. Hallin, R. Soderholm, H. Lendenmann, Appl. Phys. Lett. 80, 749 (2002).[4] J. Liu, H. Chung, T. Kuhr, Q. Li, M. Skowronski, Appl. Phys. Lett. 80, 2111 (2002).[5] R. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, L. Brillsson, Appl. Phys. Lett. 79, 3056 (2001).[6] L. Ottaviani, P. Hidalgo, H. Idrissi, M. Lancin, S. Martinuzzi, B. Pichaud, J. Phys.: Condens. Matter 16, S107 (2004).[7] P. Hidalgo, B. Méndez, P. Dutta, J. Piqueras, E. Diéguez, Phys. Rev. B 57, 6479 (1998).[8] M. Zhang, H. Hobgood, M. Treu, P. Pirouz, Mater. Sci. For.  457-460, 759 (2003).[9] B. Skromme, M. Mikhov, L. Chen, G. Samson, R. Wang, C. Li, I. Bhat, Mater. Sci. Forum 457-460, 581 (2003).[10] S.M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, New Jersey, 1969), chap. 8.[11] S. Juillaguet,in: Proceedings of the 5th European Conference on Silicon Carbide and Related Materials, Bologna, Italy, August 31-September 4 2004, p. 240.[12] T. Kuhr, J. Liu, H. Chung, M. Skowronski, F. Szmulowicz, J. Appl. Phys. 92, 5863 (2002).
NO © 2005 WILEY-VCH Verlag GmbH. International Conference on Extended Defects in Semiconductors (10. 2004. Chernogolovka, Rusia)
DS Docta Complutense
RD 8 may 2024