TY  - JOUR
AU  - Nuñez Cascajero, A.
AU  - Blasco, R.
AU  - Valdueza Felip, Sirona
AU  - Montero, Daniel
AU  - Olea Ariza, Javier
AU  - Naranjo, F. B.
PY  - 2019
DO  - 10.1016/j.mssp.2019.04.029
SN  - 1369-8001
UR  - https://hdl.handle.net/20.500.14352/13635
T2  - Materials Science in Semiconductor Processing
AB  - High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300 degrees C). Their structural, chemical and optical properties are...
LA  - eng
M2  - 8
PB  - Elsevier Science Ltd
KW  - Optical-properties
KW  - Alxin1-xn films
KW  - Band-gap
KW  - Alinn
KW  - Deposition
KW  - Si(111)
KW  - Nanocolumns
KW  - Sapphire
KW  - Epitaxy
KW  - Alloys
TI  - High quality Al0.37In0.63N layers grown at low temperature (< 300 degrees C) by radio-frequency sputtering
TY  - journal article
VL  - 100
ER  -