RT Journal Article
T1 Experimental verification of the physics and structure of the Bipolar Junction Transistor
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Martín, J.M.
A1 García, S.
AB We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions and the common emitter current gain allows to determine relevant parameters of the device. These are the built-in voltage of both junctions, the impurity gradient profiles, the electrical area of both junctions, the base and the emitter Gummel numbers, and the collector doping, The whole experiment can be conducted in a laboratory session of 3-4-hour length and it is specifically addressed to students taking lectures in semiconductor device physics. The results obtained give a deep insight into both the physical structure and the physical processes involved in the transistor behavior.
PB IEEE-Inst. Electrical Electronics Engineers Inc.
SN 0018-9359
YR 1998
FD 1998-08
LK https://hdl.handle.net/20.500.14352/59292
UL https://hdl.handle.net/20.500.14352/59292
LA eng
NO © IEEE.
DS Docta Complutense
RD 22 abr 2025