TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Martín, J.M.
AU  - García, S.
PY  - 1998
DO  - 10.1109/13.704551
SN  - 0018-9359
UR  - https://hdl.handle.net/20.500.14352/59292
T2  - IEEE Transactions on Education
AB  - We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions and...
LA  - eng
M2  - 224
PB  - IEEE-Inst. Electrical Electronics Engineers Inc.
KW  - Capacitances
KW  - BJTS.
TI  - Experimental verification of the physics and structure of the Bipolar Junction Transistor
TY  - journal article
VL  - 41
ER  -