RT Book, Section
T1 Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage
T2 Sucesos Aislados inducidos por neutrones en una memoria estática de acceso aleatorio comercial a tensiones ultrabajas
A1 Clemente Barreira, Juan Antonio
A1 Franco Peláez, Francisco Javier
A1 Vila, Francesca
A1 Baylac, Maud
A1 Ramos Vargas, Pablo Francisco
A1 Vargas Vallejo, Vanessa Carolina
A1 Mecha López, Hortensia
A1 Agapito Serrano, Juan Andrés
A1 Velazco, Raoul
AB This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 978-1-5090-0232-0
YR 2015
FD 2015-09-18
LK https://hdl.handle.net/20.500.14352/24709
UL https://hdl.handle.net/20.500.14352/24709
LA eng
NO ©IEEE 2015European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú).Date of Conference: 14-18 Sept. 2015
NO Ministerio de Economía y Competitividad
NO Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT)
NO Programa "José Castillejo" para movilidad de profesores
DS Docta Complutense
RD 20 may 2025