%0 Journal Article
%A Domínguez-Adame Acosta, Francisco
%A Piqueras de Noriega, Javier
%A Fernández Sánchez, Paloma
%T Local distribution of deep centers in GaP studied by infrared cathodoluminescence
%D 1991
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/59289
%X Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
%~