RT Journal Article
T1 Local distribution of deep centers in GaP studied by infrared cathodoluminescence
A1 Domínguez-Adame Acosta, Francisco
A1 Piqueras De Noriega, Francisco Javier
A1 Fernández Sánchez, Paloma
AB Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
PB Amer Inst Physics
SN 0003-6951
YR 1991
FD 1991-01-21
LK https://hdl.handle.net/20.500.14352/59289
UL https://hdl.handle.net/20.500.14352/59289
LA eng
NO © 1991 American Institute of Physics.This work was supported by the Comisibn Interministerial de Ciencia y Tecnologia (Project PB86-0151) . The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples and Dr. P. Moser (C.E.N.G.Grenoble) for the electron irradiation.
NO Comisión Interministerial de Ciencia y Tecnologia
DS Docta Complutense
RD 6 abr 2025