TY  - JOUR
AU  - Domínguez-Adame Acosta, Francisco
AU  - Piqueras De Noriega, Francisco Javier
AU  - Fernández Sánchez, Paloma
PY  - 1991
DO  - 10.1063/1.104681
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/59289
T2  - Applied physics Letters
AB  - Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to...
LA  - eng
M2  - 257
PB  - Amer Inst Physics
KW  - Vacancy Defects
TI  - Local distribution of deep centers in GaP studied by infrared cathodoluminescence
TY  - journal article
VL  - 58
ER  -