TY  - JOUR
AU  - Miranda Pantoja, José Miguel
PY  - 2000
DO  - 10.1088/0268-1242/15/7/311
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/58948
T2  - Semiconductor Science and Technology
AB  - We report on design, processing and characterization of AlGaAs/InGaAs/GaAs HFETs which feature the power capabilities of double delta-doped devices and the low noise performance of the standard HFETs. To study the influence of delta doping position on...
LA  - eng
M2  - 728
PB  - Iop Publishing Ltd
KW  - Field-Effect Transistors
KW  - Gate.
TI  - Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs
TY  - journal article
VL  - 15
ER  -